A 4.15 kV 9.07-mΩ • cm2 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

被引：44
|
作者：
Nakamura, T [1 ]
Miyanagi, T [1 ]
Kamata, I [1 ]
Jikimoto, T [1 ]
Tsuchida, H [1 ]
机构：
[1] Cent Res Inst Elect Power Ind, Kanagawa 2400196, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 02期
关键词：
high-voltage; low-loss; Mo contact; Schottky-barrier diode (SBD);
D O I：
10.1109/LED.2004.841473
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report the fabrication of high-voltage and low-loss 4H-SiC Schottky-barrier diodes (SBDs) with a performance close to the theoretical limit using a Mo contact annealed at high-temperature. High-temperature annealing for the Mo contact was found to be effective in controlling the Schottky-barrier height at 1.2-1.3 eV without degradation of n-factor and reverse characteristics. We successfully obtained a 1-mm(2) Mo-4H-SiC SBD with a breakdown voltage (V-b) of 4.15 kV and a specific on resistance (R-on) of 9.07 mOmega (.) cm(2), achieving a best V-b(2)/R-on value of 1898 MW/cm(2),. We also obtained a 9-mm(2) Mo-4H-SiC SBD with Vb of 4.40 kV and R-on of 12.20 mOmega (.) cm(2).
引用
收藏
页码：99 / 101
页数：3
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