Delta-doped GaAs/AlAs multiple quantum wells:Study by optical and terahertz techniques

被引：0

作者：

Cechavicius, Bronislovas ^{[1
]}

Kavaliauskas, Julius ^{[1
]}

Krivaite, Gene ^{[1
]}

Seliuta, Dallus ^{[1
]}

Valusis, Gintaras ^{[1
]}

Sherliker, Ben ^{[1
]}

Halsall, Matthew ^{[1
]}

Harrison, Paul ^{[1
]}

Khanna, Suraj ^{[1
]}

Linfield, Edmund ^{[1
]}

机构：

[1] Inst Semicond Phys, A Gostauto 11, LT-01108 Vilnius, Lithuania

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoreflectance (PR) and differential surface photovoltage (DSPV) spectroscopies were employed to characterize optically Be and Si delta-doped GaAs/AlAs multiple quantum wells. The surface electric field strength was estimated from the Franz-Keldysh oscillations clearly visible in PR spectra. Line shape analysis of DSPV spectra allowed one to estimate interband excitonic transition energies and broadening parameters for a large number of QW-related subbands; reasonable agreement was found between experimental and calculated transition energies. The interface quality and the main factors responsible for exciton line broadening were evaluated from spectroscopic data. These MQW structures were also studied as selective THz sensors by spectral photocurrent measurements at low temperatures.

引用

页码：427 / +

页数：2

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