Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

被引：58
|
作者：
Lu, Bin [1 ]
Piner, Edwin L. [2 ]
Palacios, Tomas [1 ]
机构：
[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[2] Nitronex Corp, Durham, NC 27703 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 04期
关键词：
Buffer breakdown; GaN-on-silicon; high-electron mobility transistor (HEMT); power electronics; Schottky drain; HEMTS; SILICON; BUFFER; POWER;
D O I：
10.1109/LED.2010.2040704
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-mu m-thick GaN buffer showed a threeterminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed a maximum breakdown voltage below 600 V. The improvement of the breakdown voltage has been associated with the planar contact morphology and lack of metal spikes in the Schottky-drain metallization.
引用
收藏
页码：302 / 304
页数：3
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