Structure and microwave dielectric properties of Ba1-xSrxMg2V2O8 ceramics

被引:19
|
作者
Wang, Yang [1 ]
Zuo, Ruzhong [1 ]
机构
[1] Hefei Univ Technol, Sch Mat Sci & Engn, Inst Elect Ceram & Devices, Hefei 230009, Peoples R China
基金
中国国家自然科学基金;
关键词
C. Dielectric properties; Ceramics; Bond valence; TEMPERATURE-COEFFICIENT; SINTERING TEMPERATURE; CORUNDUM STRUCTURE; LTCC APPLICATIONS; BOND VALENCE; W CERAMICS; SYSTEM; ZN; CA; SUBSTITUTION;
D O I
10.1016/j.ceramint.2016.03.208
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The Ba1-xSrxMg2V2O8 (0 <= x <= 0.4) microwave dielectric ceramics were fabricated by a standard solid-state reaction method. The formation of a continuous solid solution within the whole composition range was identified. The ceramic samples could be well densified in the temperature range of 885-975 degrees C in air for 4 h. The permittivity er was found to increase with increasing ionic polarizabilities. The Qxf values were believed to be closely related with packing fraction and grain refinement. The Sr2+ substitution contributed to a monotonous increase of the A-site bond valence, such that the tau(f) value experienced a considerable variation from negative to positive values. The optimum microwave dielectric properties of an epsilon(r) of 13.3, a high Qxf of 86,640 GHz (9.6 Hz) and a near-zero tau(f) of -6 ppm/degrees C could be yielded in the x=0.15 sample when sintered at 915 degrees C for 4 h. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:10801 / 10807
页数:7
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