Vertical illumination InAlAs avalanche photodiode for 50-Gbit/s applications

被引：0
|
作者：
Nada, Masahiro [1 ]
Muramoto, Yoshifumi [1 ]
Yokoyama, Haruki [1 ]
Ishibashi, Tadao [1 ]
Matsuzaki, Hideaki [1 ]
机构：
[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa, Japan
来源：
26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2014年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We achieved a high-performance InAlAs avalanche photodiode (APD) for beyond 25-Gbit/s applications, such as 50-Gbit/s. The large optical tolerance of the APD's vertical-illumination structure makes optical coupling easy compared with waveguide-type structures. The fabricated APD exhibits responsivity of 0.69 A/W with a large 3-dB bandwidth of 30 GHz at a multiplication factor (M) of 4.6, which enables 50-Gbit/s highly sensitive operation.
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