Evidence of weak-antilocalization phenomenon in Al-induced crystallization grown polycrystalline-SiGe thin film

被引：1

作者：

Sain, Twisha ^{[1
]}

Singh, Ch. Kishan ^{[1
]}

Amaladass, E. P. ^{[1
]}

Abhirami, S. ^{[1
]}

Ilango, S. ^{[1
]}

Mathews, T. ^{[1
]}

Mani, Awadhesh ^{[1
]}

机构：

[1] HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

来源：

MATERIALS LETTERS | 2021年 / 300卷

关键词：

Thin films; Al-doping; Polycrystalline-SiGe; Magneto-resistance; Weak-antilocalization effect; Semiconductors; MAGNETORESISTANCE;

D O I：

10.1016/j.matlet.2021.130164

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the low-temperature magneto-transport properties of a polycrystalline-SiGe thin film realized on glass at 350 celcius via Al-induced layer exchange crystallization. The film exhibits a degenerate p-type behavior, and we observed evidence of weak-antilocalization (WAL) effect that manifests as an anomalous positive magnetoresistance (MR) below 10 K and weak magnetic fields (B) between +/- 1 Tesla. While the spin-orbit coupling length is nearly constant at - 40 nm, the temperature dependence of phase-coherence length, which has a maximum value at 4 K (-131 nm), indicates hole-hole scattering as the predominant de-phasing mechanism. This result shows the degenerate Al doping causes the WAL effect in the present system.

引用

页数：3

共 15 条

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