Anisotropic conductivity of doped graphene due to short-range nonsymmetric scattering

被引:2
|
作者
Vasko, F. T. [1 ]
机构
[1] NAS Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
关键词
doping profiles; electrical conductivity; graphene;
D O I
10.1063/1.3431667
中图分类号
O59 [应用物理学];
学科分类号
摘要
The conductivity of doped graphene is considered taking into account scattering by short-range nonsymmetrical defects, when the longitudinal and transverse components of conductivity tensor appear to be different. The calculations of the anisotropic conductivity tensor are based on the quasiclassical kinetic equation for the case of monopolar transport at low temperatures. The effective longitudinal conductivity and the transverse voltage, which are controlled by orientation of sample and by gate voltage (i.e., doping level), are presented. (C) 2010 American Institute of Physics. [doi:10.1063/1.3431667]
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页数:3
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