A Charge Compensation Phototransistor for High-Dynamic-Range CMOS Image Sensors

被引：7

作者：

Cui, Shuang ^{[1
]}

Li, Zhaohan ^{[1
]}

Wang, Chao ^{[2
]}

Yang, Xiaotian ^{[2
]}

Wang, Xinyang ^{[3
]}

Chang, Yuchun ^{[1
,4
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China

[2] Jilin Jianzhu Univ, Jilin Prov Key Lab Architectural Elect & Comprehe, Changchun 130118, Jilin, Peoples R China

[3] Gpixel Inc, Changchun 130033, Jilin, Peoples R China

[4] Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Charge compensation phototransistor; CMOS image sensor (CIS); high-dynamic range (HDR); LOGARITHMIC RESPONSE; REDUCTION; NOISE;

D O I：

10.1109/TED.2018.2837140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a charge compensation phototransistor for high-dynamic-range CMOS image sensors (CIS). With a built-in charge compensation mechanism, the photoresponse of the proposed device can switch between the linear mode and the logarithmic mode automatically, according to the incident light intensity. In particular, the device does not saturate until approximately 0.5 W/cm(2), almost 5 times the brightness of the sun. Therefore, CIS with this proposed phototransistor demonstrates a measured dynamic range of 167 dB, and an output swing of more than 2 V without amplification. The nonideal behavior of the proposed device due to the thermal effect and the parasitic resistances is investigated when exposed with high incident light intensity. In addition, the nonuniform response of the pixel array is exhibited and analyzed.

引用

页码：2932 / 2938

页数：7

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