Using TOF-SIMS for the analysis of metal contamination on silicon wafers.

被引：0
|
作者：
Mowat, IA [1 ]
Schuerlein, T [1 ]
Metz, J [1 ]
Brigham, R [1 ]
Huffaker, D [1 ]
机构：
[1] Charles Evans & Associates, Redwood City, CA 94063 USA
来源：
CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING | 2000年 / 99卷 / 36期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The current methods of choice for the analysis of metal contaminants on silicon wafers are Total Reflection X-Ray Fluorescence (TXRF) and SurfaceSIMS, However each of these techniques has some limitations which do not allow either of them to provide a full information set on all the potential metal contaminants of interest. TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) is a survey technique with extreme surface sensitivity that has been investigated and characterized as a complementary tool to these more established techniques. Investigation of the factors affecting TOF-SIMS detection limits and an analysis of the accuracy and precision of TOF-SIMS analyses of Si wafers will be described.
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页码：561 / 568
页数：8
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