Advances in rare earth application to semiconductor materials and devices

被引：0

作者：

Tu, HL ^{[1
]}

机构：

[1] Natl Engn Res Ctr Semicond Mat, Gen Res Inst NonFerrous Met, Beijing 100088, Peoples R China

来源：

JOURNAL OF RARE EARTHS | 2004年 / 22卷 / 05期

关键词：

semiconductor; materials; devices; application; rare earths;

D O I：

暂无

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED) and display materials are described. The various technologies of incorporating RE into semiconductor materials and devices are presented. The RE high dielectric materials, RE silicides and the phase transition of RE materials are also discussed. Finally, the paper describes the prospects of the RE application to semiconductor industry.

引用

页码：571 / 575

页数：5

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