Size-dependent strain effects on electronic and optical properties of ZnO nanowires

被引:31
|
作者
Yang, Yurong [1 ]
Yan, X. H. [1 ]
Xiao, Yang [1 ]
Lu, Di [1 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Dept Phys, Nanjing 210016, Peoples R China
基金
中国国家自然科学基金;
关键词
ab initio calculations; dielectric function; energy gap; II-VI semiconductors; nanowires; red shift; semiconductor quantum wires; wide band gap semiconductors; TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET;
D O I
10.1063/1.3464974
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic and optical properties of ZnO nanowires under uniaxial strain are investigated using first-principles calculations. The results show that the electronic band gap for the ultrathin ZnO nanowires displays a nonmonotonic relationship with the strain, while the gap is inversely proportional to strain and shows a linear relationship for the nanowires with diameter larger than 2.4 nm. Optical properties calculations show that the dielectric function peaks for ultrathin nanowires display a redshift with decreasing uniaxial strain, this energy shift decreases with increasing diameter and vanishes as the diameter increases to 2.4 nm. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464974]
引用
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页数:3
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