Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films

被引：47
|
作者：
Yao, Yifan [1 ]
Zhou, Dayu [1 ]
Li, Shuaidong [1 ]
Wang, Jingjing [1 ]
Sun, Nana [1 ]
Liu, Feng [2 ]
Zhao, Xiuming [2 ]
机构：
[1] Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
[2] Dalian Univ Technol, Instrumental Anal & Res Ctr, Panjin Campus, Panjin 124221, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2019年 / 126卷 / 15期
基金：
中国国家自然科学基金;
关键词：
XPS;
D O I：
10.1063/1.5117358
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferroelectricity in calcium doped hafnium oxide (Ca:HfO2) thin films has been experimentally proved for the first time in this work. All films prepared by chemical solution deposition exhibited smooth and crack-free surfaces, which were observed using an atomic force microscope. After 10(4) field cycling, a maximum remanent polarization of 10.5 mu C/cm(2) was achieved in HfO2 films with 4.8 mol. % Ca content. Meanwhile, the breakdown of the film occurred after 7 x 10(6) electric cycles. A phase transition from the monoclinic phase to cubic/orthorhombic phases was observed with increasing Ca concentration. We suggest the change in oxygen vacancy concentration as the origin of phase evolution, which was confirmed by X-ray photoelectron spectroscopy analysis. These results open a new pathway for realizing ferroelectricity in HfO2-based films. Published under license by AIP Publishing.
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页数：8
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