Integrated InP Mach-Zehnder analog modulator

被引:0
|
作者
May-Arrioja, D. A. [1 ,2 ]
LikamWa, P. [1 ,2 ]
Shubin, I. [3 ]
Yu, P. [3 ]
机构
[1] Univ Cent Florida, Coll Opt & Photon, CREOL, Orlando, FL 32816 USA
[2] Univ Cent Florida, Coll Opt & Photon, FPCE, Orlando, FL 32816 USA
[3] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USA
关键词
D O I
10.1109/LEOS.2006.279172
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate the use of an area selective zinc indiffusion technique to fabricate an integrated InP Mach-Zehnder optical modulator. The modulator exhibits an extinction ratio of 19 dB and a voltage swing of +/- 2.3 volts at a wavelength of 1550 nm. The extinction ratio is only reduced to -18 dB when operated over a 40 mn range, with the center wavelength around 1560 nm. The V. voltage is increased from 4 volts at 1540 nm to 7.1 volts at 1580 nm. Very good electrical isolation is obtained between the contacts, which confirms the potential of the technique for the fabrication of Photonic Integrated Circuits (PIC).
引用
收藏
页码:406 / +
页数:2
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