IMPACT OF TUNNEL HETEROJUNCTION (InGaP/GaA) DOPING CONCENTRTION ON THE PERFORMANCE OF InGaP/GaAs TONDEM SOLAR CELL USING SILVACO-ATLAS SOFTWARE

被引：0
|
作者：
Fillali, M. [1 ]
Dennai, B. [2 ]
机构：
[1] Univ Tahri Mohammed Bechar, Lab Semicond Devices Phys, Bechar, Algeria
[2] Univ Tahri Mohammed Bechar, Fac Exact Sci, Lab Smart Grid & Renewable Energy, Bechar, Algeria
来源：
JOURNAL OF OVONIC RESEARCH | 2019年 / 15卷 / 05期
关键词：
Solar cell; InGaP/GaA; Tunnel heterojunction; Tondem solar cell; Silvaco-atlas; SINGLE;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of tunnel heterojunction doping in tandem solar cells is determined. For this, the current-voltage measurements of solar cell devices carried out at room temperature under radiation (AM1.5) using SILVACO ATLAS simulator software. The tunnel junction (InGaP/GaAs) designs for multijunction (InGaP/GaAs) solar cells studied to determine their electrical performances as a function of the tunnel doping concentration. We report the design of InGaP/GaAs solar cell using tunnel heterojunction with varied p+-InGaP concentration doping, this concentration to be in the range of 10(19)-10(20) cm(-3). The results of this investigation revealed that n-InGaP concentration doping have effect on the conversion efficiency, short circuit current density and open circuit voltage. This study, after the step of improvement, allowed the conversion of energy efficiency to 23.97% compared to existing studies.
引用
收藏
页码：279 / 285
页数：7
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