Modeling gate oxide breakdown under bipolar stress

被引：4

作者：

Duan, XD

Yuan, JS ^{[1
]}

机构：

[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA

[2] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(00)00129-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Closed form analytical equations For time-dependent dielectric breakdown of the gate oxide under bipolar stress is proposed for the first time. The effect of stress frequency, gate current polarity, and temperature on the time to breakdown is accounted fur in the proposed hole injection detrap model. The lifetime improvement with increasing frequency is mainly due to the competition between the hole trapping process at the forward stress field and hole detrapping process at the reverse stress field. The modeling results show good agreement with the experimental data. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1537 / 1541

页数：5

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