Untwinned semipolar (10(1)over-bar3) AlxGa1-xN layers grown on m-plane sapphire

被引：5
|
作者：
Dinh, Duc V. [1 ]
Hu, Nan [2 ]
Amano, Hiroshi [1 ,3 ]
Honda, Yoshio [1 ]
Pristovsek, Markus [1 ]
机构：
[1] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan
[2] Nagoya Univ, Sch Engn, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 12期
基金：
日本科学技术振兴机构;
关键词：
nitrides; AlGaN; semiconducting aluminium compounds; metalorganic vapour phase epitaxy; LIGHT-EMITTING-DIODES; GALLIUM NITRIDE FILMS; 11(2)OVER-BAR2 ALGAN; OPTICAL-PROPERTIES; MOVPE GROWTH; V/III-RATIO; ALN LAYERS; GAN; QUALITY;
D O I：
10.1088/1361-6641/ab4d2c
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heteroepitaxial growth of untwinned mono-crystalline semipolar (101?3) Al(x)Ga1?xN<i layers on (101?3) AlN template was investigated by metalorganic vapour phase epitaxy. The templates were initially deposited on (101?0) m-plane sapphire substrates by directional sputtering. Different Al/Ga ratios in gas phase were used to adjust the AlN mole fraction over the entire range of composition. All the layers show a triclinic distortion in the wurtzite unit cell due to anisotropic in-plane strain. The AlN mole fraction of the (101?3) layers and c-plane co-loaded layers estimated by x-ray diffraction is comparable. This is consistent both with their comparable effective bandgap energy estimated from optical transmission measurements and their near band-edge emission energy obtained from room-temperature photoluminescence. The dependence of the bandgap and near band-edge emission energies on the AlN mole fraction indicates a bowing parameter of 0.9 eV.
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页数：8
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