Formation of a Memristive Array of Crossbar-Structures Based on (Co40Fe40B20)x(LiNbO3)100 Nanocomposite

被引：6

作者：

Nikiruy, K. E. ^{[1
,2
]}

Emelyanov, A. V. ^{[1
,2
]}

Rylkov, V. V. ^{[1
,3
]}

Sitnikov, A. V. ^{[1
,4
]}

Presnyakov, M. Yu. ^{[1
]}

Kukueva, E. V. ^{[1
]}

Grishchenko, Yu. V. ^{[1
]}

Minnekhanov, A. A. ^{[1
]}

Chernoglazov, K. Yu. ^{[1
]}

Nikolaev, S. N. ^{[1
]}

Chernykh, I. A. ^{[1
]}

Zanaveskin, M. L. ^{[1
]}

Demin, V. A. ^{[1
,2
]}

机构：

[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia

[2] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Oblast, Russia

[3] Russian Acad Sci, Fryazino Branch, Kotelnikov Inst Radioengn & Elect IRE, Fryazino 141190, Moscow Oblast, Russia

[4] Voronezh State Tech Univ, Voronezh 394026, Russia

来源：

JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2019年 / 64卷 / 10期

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

STATE;

D O I：

10.1134/S1064226919100103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The possibility of scaling of recently developed memristors of a new type based on (Co40Fe40B20)(x)(LiNbO3)(100 -x) is shown. The scaling is carried out by formation of the array of elements with a surface area of 50 x 50 mu m(2). It is shown that the spread of resistances in the high (off-state; R-off) and low resistance states (on-state; R-on) when resistive switching (RS) does not exceed 25% and individual elements show endurance exceeding 2 x 10(5) times when R-off/R-on > 10. For the first time within the region of resistive switching, the possibility of quasi-continuous change of the resistive state of structures by stepwise change with an accuracy no less than 0.2% (256 steps in the range 0.5-3 M ohm) was demonstrated.

引用

页码：1135 / 1139

页数：5

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