Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode

被引:47
|
作者
Worschech, L. [1 ]
Hartmann, F. [1 ]
Kim, T. Y. [1 ]
Hoefling, S. [1 ]
Kamp, M. [1 ]
Forchel, A. [1 ]
Ahopelto, J. [2 ]
Neri, I. [3 ,4 ]
Dari, A. [3 ,4 ]
Gammaitoni, L. [3 ,4 ]
机构
[1] Univ Wurzburg, Inst Phys, Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany
[2] VTT Micro & Nanoelect, FI-02044 Espoo, Finland
[3] Univ Perugia, Dipartimento Fis, NiPS Lab, I-06123 Perugia, Italy
[4] Ist Nazl Fis Nucl, Sez Perugia, I-06123 Perugia, Italy
关键词
aluminium compounds; gallium arsenide; III-V semiconductors; logic gates; nanoelectronics; neurophysiology; resonant tunnelling diodes; stochastic processes; NOISE;
D O I
10.1063/1.3302457
中图分类号
O59 [应用物理学];
学科分类号
摘要
Submicron-sized mesas of resonant tunneling diodes (RTDs) with split drain contacts have been realized and the current-voltage characteristics have been studied in the bistable regime at room temperature. Dynamically biased, the RTDs show noise-triggered firing of spikelike signals and can act as reconfigurable universal logic gates for small voltage changes of a few millivolt at the input branches. These observations are interpreted in terms of a stochastic nonlinear processes. The logic gate operation shows gain for the fired-signal bursts with transconductance slopes exceeding the thermal limit. The RTD junction can be easily integrated to arrays of multiple inputs and have thus the potential to mimic neurons in nanoelectronic circuits.
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页数:3
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