Development of an ac-dc thermal converter at millivolt level operating at cryogenic temperature

被引:1
|
作者
Monticone, E [1 ]
Pogliano, U [1 ]
Lacquaniti, V [1 ]
Serazio, D [1 ]
机构
[1] Ist Elettrotecnico Nazl Galileo Ferraris, I-10135 Turin, Italy
关键词
D O I
10.1109/CPEM.2000.851125
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A device for the measurements of ac-de transfer difference at millivolt level is under development at IEN. In this device a Cr heater, Nb leads and a Nb transition edge thermometer have been deposited by evaporation on a silicon nitride (SIN) membrane. Analysis on the possible effects on the ac-dc transfer difference and first experimental tests show the possibility of high accuracy direct measurements at the level of 1 mV.
引用
收藏
页码:548 / 549
页数:2
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