Effect of hydrogen dilution on the silicon cluster volume fraction of a hydrogenated amorphous silicon film prepared using plasma-enhanced chemical vapor deposition

被引：2
|
作者：
Kim, Yeonwon [1 ]
Koga, Kazunori [2 ]
Shiratani, Masaharu [2 ]
机构：
[1] Mokpo Natl Maritime Univ, Div Marine Mechatron, 91 Haeyangdaehak Ro, Mokpo Si 58628, Jeollanam Do, South Korea
[2] Kyushu Univ, Fac Informat Sci & Elect Engn, Nishi Ku, 744 Motooka, Fukuoka, Fukuoka 8190395, Japan
来源：
CURRENT APPLIED PHYSICS | 2020年 / 20卷 / 01期
关键词：
Silicon cluster; Silicon film; Multi-hollow electrode; Hydrogen; Dilution; PECVD; A-SI-H; FORMATION KINETICS; SOLAR-CELL; GROWTH; PARTICLES;
D O I：
10.1016/j.cap.2019.11.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the effect of hydrogen dilution on the Si cluster volume fraction of hydrogenated amorphous films by varying the hydrogen dilution ratio at 0.5 Torr and compared it to that obtained at pure silane discharge at 0.3, 0.4, and 0.5 Torr. The correlation between the plasma emission characteristic, deposition rate, and cluster volume fraction in the hydrogen dilution plasma was described. The cluster volume fractions of films under hydrogen dilution conditions were similar to those of the pure silane but showed a higher deposition rate. The results suggest that under hydrogen dilution conditions, it is possible to maintain a higher deposition rate with a lower cluster incorporation rate.
引用
收藏
页码：191 / 195
页数：5
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