Molecular beam epitaxy growth and characteristics of the high quantum efficiency InAs/GaSb type-II superlattices MWIR detector

被引：0
|
作者：
Chen Kai-Hao [1 ,2 ]
Xu Zhi-Cheng [1 ]
Liang Zhao-Ming [1 ]
Zhu Yi-Hong [1 ]
Chen Jian-Xin [1 ]
He Li [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2021年 / 40卷 / 03期
基金：
中国国家自然科学基金;
关键词：
molecular beam epitaxy; high quantum efficiency; mid-wavelength infrared;
D O I：
10.11972/j.issn.1001-9014.2021.03.001
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A very high quantum efficiency InAs/GaSb T2SL mid-wavelength infrared (MWIR) photodetector has been grown by molecular beam epitaxy (MBE). The T2SL detector structure material exhibited smooth surface with step-flow growth and excellent structural homogeneity. The 50% cut-off wavelength was about 5.5 mu m. The peak current responsivity was 2.6 A/W corresponding to a quantum efficiency over 80% at 77 K,which was comparable to that of MCT. At 77 K,the dark current density at -50 mV bias was 1.8x10(-6) A/cm(2) and the resistance-area product (RA) at maximum (-50 mV bias) was 3.8x10(5) Omega.cm(2). The peak detectivity was calculated to be 6.1 x 10(12) cm Hz(1/2)/W.
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页码：285 / 289
页数：5
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