Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3-D NAND Flash Memory

被引：8

作者：

Wilcox, Edward P. ^{[1
]}

Breeding, Matthew L. ^{[2
]}

Casey, Megan C. ^{[1
]}

Pellish, Jonathan A. ^{[1
]}

Reed, Robert A. ^{[2
]}

Alles, Michael L. ^{[2
]}

Schrimpf, Ronald D. ^{[2
]}

机构：

[1] NASA Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2021年 / 68卷 / 05期

关键词：

Protons; Testing; Radiation effects; Three-dimensional displays; Silicon; Single event upsets; NASA; 3-D NAND; direct ionization; flash memory; proton; single-event upset (SEU); HARDNESS ASSURANCE; SIMULATION; UPSETS;

D O I：

10.1109/TNS.2021.3063156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-event upsets are observed in a 72-layer 3-D NAND flash memory operated in a single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy-ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low-energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by 3-D data analysis and the energy dependence of device-sensitive cross section. Heavy-ion data is also presented for comparison.

引用

页码：835 / 841

页数：7

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