A low power current-reused CMOS RF front-end with stacked LNA and mixer

被引：3
|
作者：
Yoo, Sang-Sun [1 ]
Yoo, Hyung-Joun [1 ]
机构：
[1] Univ Informat & Commun Univ, Sch Engn, 119 Munji Ro, Taejon 305732, South Korea
来源：
2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2007年
关键词：
low power; stacked; current-reuse; variable gain; Bluetooth; Zig-Bee;
D O I：
10.1109/SMIC.2007.322780
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low power variable gain RF front-end is designed and fabricated in 0.25 um CMOS technology. Power consumption can be reduced by sharing current between cascode LNA and mixer. The power consumption of designed RF front-end is 11.3 mW with 2.5 V supply voltage. Also, gain of the RF front-end is varied from 14.5 to 30.5 dB by changing the load impedance of LNA.
引用
收藏
页码：103 / +
页数：2
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