TEM and HRXRD analysis of LP MOVPE grown InGaP/GaAs epilayers

被引：0
|
作者：
Pelosi, Claudio [1 ]
Bosi, Matteo [1 ]
Attolini, Giovanni [1 ]
Germini, Fabrizio [1 ]
Frigeri, Cesare [1 ]
Prutskij, Tatiana [2 ]
机构：
[1] CNR, IMEM Inst, Parco Area Sci 37A, I-43010 Parma, Italy
[2] BUAP, Inst Ciencias, Puebla 72050, Mexico
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
InGaP/GaAs-; interfaces; structural analysis;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.
引用
收藏
页码：29 / +
页数：2
相关论文
共 50 条
  • [1] Ordering effects in InGaP/GaAs and InGaAsP/GaAs heterostructures grown by LP-MOVPE
    Francesio, L
    Franzosi, P
    Caldironi, M
    Vitali, L
    Dellagiovanna, M
    DiPaola, A
    Vidimari, F
    Pellegrino, S
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1996, 18 (08): : 975 - 983
  • [2] TEM INVESTIGATIONS OF LP-MOVPE GROWN GAAS/GE HETEROSTRUCTURES
    FRANZOSI, P
    LAZZARINI, L
    SALVIATI, G
    SCAFFARDI, M
    TIMO, G
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 399 - 402
  • [3] DOPED INGAP GROWN BY MOVPE ON GAAS
    IWAMOTO, T
    MORI, K
    MIZUTA, M
    KUKIMOTO, H
    JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 27 - 31
  • [4] Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures
    Attolini, G
    Scardova, S
    Germini, F
    Pelosi, C
    Martínez, O
    Sanz, LF
    González, MA
    Jiménez, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 123 - 127
  • [5] ARXPS characterization of InGaP/GaAs heterointerface grown by MOVPE
    Lopez, M. C.
    Galiana, B.
    Algora, C.
    Rey-Stolle, I.
    Garcia, I.
    Gabas, M.
    Ramos-Barrado, J. R.
    2007 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS, 2007, : 169 - +
  • [6] Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE
    Dumont, H
    Auvray, L
    Monteil, Y
    Bouix, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 84 (03): : 258 - 264
  • [7] Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE
    Attolini, G
    Bocchi, C
    Germini, F
    Pelosi, C
    Parisini, A
    Tarricone, L
    Kùdela, R
    Hasenohrl, S
    MATERIALS CHEMISTRY AND PHYSICS, 2000, 66 (2-3) : 246 - 252
  • [8] Defect study of MOVPE-grown InGaP layers on GaAs
    Knauer, A
    Krispin, P
    Balakrishnan, VR
    Weyers, M
    JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 627 - 632
  • [9] Etching behavior of GaN/GaAs(001) epilayers grown by MOVPE
    Shen, Xiaoming
    Feng, Zhihong
    Feng, Gan
    Fu, Yi
    Zhang, Baoshun
    Sun, Yuanping
    Zhang, Zehong
    Yang, Hui
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2002, 23 (07): : 707 - 712
  • [10] InGaP/GaAs/InGaP quantum wires grown on pre-patterned substrates by MOVPE
    Novák, J
    Kicin, S
    Hasenöhrl, S
    Vávra, I
    Kucera, M
    Hudek, P
    MICROELECTRONIC ENGINEERING, 2000, 51-2 : 11 - 17
12345