Temperature dependence of the Hall angle in disordered Y1-xPrxBa2Cu3O7-δ thin films

被引：0

作者：

Makise, K

Yadoguchi, Y

Ichikawa, F ^{[1
]}

Fukami, T

Aomine, T

Hao, Z

Zhu, B

Xu, B

Zhao, BR

Nishizaki, T

Kobayashi, N

机构：

[1] Kumamoto Univ, Dept Phys, Kumamoto 8608555, Japan

[2] Himeji Inst Technol, Dept Mat Sci & Engn, Himeji, Hyogo 6712201, Japan

[3] Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100080, Peoples R China

[4] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[5] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[6] Kyushu Univ, Dept Phys, Fukuoka 8128581, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2003年 / 388卷

关键词：

superconductor-insulator transition; Hall angle; Y1-xPrxBa2Cu3O7-delta thin films;

D O I：

10.1016/S0921-4534(02)02489-9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the behavior of carriers near the field-induced superconductor-insulator transition for different disordered Y1-xPrBa2Cu3O7-delta thin films. The measurement of longitudinal and Hall resistivities has been carried out in the magnetic fields. For the lower disordered film the superconducting transition appeared even at 10 T, while, the insulating behavior was observed for the higher disordered film. Also the temperature dependence and values of Hall angle Cot theta(H) are related to the disorder. We discuss the behavior of carriers on the viewpoint of the electronic state. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：337 / 338

页数：2

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