Preparation of CuIn1-xGaxSe2 films by metalorganic chemical vapor deposition using three precursors

被引：24
|
作者：
Choi, I. H. [1 ]
Lee, D. H. [1 ]
机构：
[1] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 11期
关键词：
CIGS; CIS; CulnSe(2); CulnGaSe(2);
D O I：
10.1016/j.tsf.2006.11.078
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CulnGaSe(2) thin films have been prepared by a low pressure metalorganic chemical vapor deposition technique using three precursors without additional Se. The properties of the resultant films have been examined by scanning electron microscopy, X-ray diffraction, micro-Raman scattering and absorption spectroscopy. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4778 / 4782
页数：5
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