Spin gap, charge carriers, and low-temperature features of the behavior of Yb4As3

被引：3
|
作者：
Zvyagin, AA
机构：
[1] Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
[2] Natl Acad Sci Ukraine, BI Verkin Inst Low Temp Phys & Engn, UA-61164 Kharkov, Ukraine
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 18期
关键词：
D O I：
10.1103/PhysRevB.62.12175
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The analysis of the low-temperature behavior of the low-dimensional heavy fermion compound Yb4As3 is presented. The renormalization of the spin gap due to the presence of a small amount of carriers is calculated. We also calculated the low-temperature (magneto)resistivity dependence. The analysis of the very low-temperature experimental data supports the disorder- or magnetic phase transition-driven very low-temperature upturns of the magnetic susceptibility and Sommerfeld coefficient of the specific heat.
引用
收藏
页码：12175 / 12180
页数：6
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