Growth defects in heteroepitaxial diamond

被引：9

作者：

Lebedev, Vadim ^{[1
]}

Engels, Jan ^{[1
]}

Kustermann, Jan ^{[1
]}

Weippert, Juergen ^{[1
]}

Cimalla, Volker ^{[1
]}

Kirste, Lutz ^{[1
]}

Giese, Christian ^{[1
]}

Quellmalz, Patricia ^{[1
]}

Graff, Andreas ^{[2
]}

Meyer, Frank ^{[3
]}

Hoefer, Markus ^{[4
]}

Sittinger, Volker ^{[4
]}

机构：

[1] Fraunhofer IAF, Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] Fraunhofer IMWS, Fraunhofer Inst Microstruct Mat & Syst, D-06120 Halle, Germany

[3] Fraunhofer IWM, Fraunhofer Inst Mech Mat, D-79108 Freiburg, Germany

[4] Fraunhofer IST, Fraunhofer Inst Surface Engn & Thin Films, D-38108 Braunschweig, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2021年 / 129卷 / 16期

关键词：

LAYERS;

D O I：

10.1063/5.0045644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In focus of this report are the mechanisms of formation, propagation, and interaction of growth defects in heteroepitaxial diamond films along with their impact on the optical emission properties of N- and Si-vacancy (NV and SiV) color centers. Here, we analyze and discuss the properties of incoherent grain boundaries (IGBs) and extended defects in a nitrogen- and boron-doped heterodiamond nucleated and grown on Ir(001) via bias-enhanced nucleation and chemical vapor deposition techniques. We show that the low-angle IGBs alter the structural and optical emission properties of NV and SiV complexes by subduing NV emission and supporting the formation of interstitial Si-vacancy complexes dominating in the faulted IGB regions. We also demonstrate that the IGB-confined threading dislocations are responsible for the vertical transport and incorporation of Si impurities in thick layers, leading to an enhanced SiV emission from the IGBs.

引用

页数：14

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