Electron mobility and electron scattering by polar optical phonons in heterostructure quantum wells

被引：21
|
作者：
Pozela, J [1 ]
Pozela, K [1 ]
Juciene, V [1 ]
机构：
[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 09期
关键词：
D O I：
10.1134/1.1309408
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Basic features of confined electron scattering in quantum wells (QWs) by confined polar optical (PO) phonons are analyzed. The dependence of electron mobility in Al0.25Ga0.75As/GaAs/Al0.25Ga0.75As QWs on the well width is calculated. It is demonstrated that increases and decreases in electron mobility (relative to the bulk value) as a function of the QW width occur due to resonance intersubband scattering. The dependence of electron mobility limited by PO phonon scattering on the electron density n(s) in the QW is calculated. It is shown that anomalous behavior of electrical conductivity, which in certain cases decreases with increasing electron density, can take place in Al0.25Ga0.75As/GaAs/Al0.25Ga0.75As QWs for n(s) > 10(16) m(-2). (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：1011 / 1015
页数：5
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