Design and modeling of bulk and SOI power LDMOSFETs for RF wireless applications

被引：5

作者：

Trivedi, M

Khandelwal, P

Shenai, K

Leong, SK

机构：

[1] Univ Illinois, Dept Elect Engn & Comp Sci, Chicago, IL 60607 USA

[2] Polyfet RF Devices, Camarillo, CA USA

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 08期

关键词：

D O I：

10.1016/S0038-1101(00)00084-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design optimization of LDMOSFET structures for use as power amplifiers in mobile wireless applications. A detailed study has been carried out to evaluate the influence of the device substrate on the RF performance. The performance of devices with bulk and Silicon-on-insulator (SOI) substrates has been compared for 50 V LDMOSFETs. In both cases, p-type and n-type epitaxial layers were considered. Extensive two-dimensional simulations have been performed to understand the device dynamics and to optimize the devices for better RF performance. A simple physics-based circuit model has been developed to enable large signal simulations for RF characterization. It is shown that bulk devices on n-type epitaxial layers yield the highest output RF power for a given voltage and current rating. SOI devices offer comparable RF performance with less area for a given rating, but suffer from self-heating effects. Thick-film SOI is shown as a viable power amplifier technology for integrated RFIC applications. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：1343 / 1354

页数：12

共 50 条

[1] RF power performance of LDMOSFETs on SOI: An experimental comparison with bulk Si LDMOSFETs
Fiorenza, JG
del Alamo, JA
[J]. 2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2001, : 43 - 46
[2] Performance evaluation of bulk Si and SOI RF LDMOSFETs for emerging RFIC applications
Perupalli, P
Trivedi, M
Shenai, K
Leong, SK
[J]. 1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 108 - 109
[3] Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon
Fiorenza, JG
del Alamo, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) : 687 - 692
[4] RF electro-thermal modeling of LDMOSFETs for power-amplifier design
Akhtar, S
Roblin, P
Lee, S
Ding, XH
Yu, S
Kasick, J
Strahler, J
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (06) : 1561 - 1570
[5] RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications
Parthasarathy, Shyam
Trivedi, Amit
Sirohi, Saurabh
Groves, Robert
Olsen, Michael
Chauhan, Yogesh S.
Carroll, Michael
Kerr, Dan
Tombak, Ali
Mason, Phil
[J]. 23RD INTERNATIONAL CONFERENCE ON VLSI DESIGN, 2010, : 194 - +
[6] The design, characterization, and modeling of RF LDMOSFETs on silicon-on-insulator material
McShane, E
Shenai, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) : 643 - 651
[7] The impact of substrate surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI
Scholvin, J
Fiorenza, JG
del Alamo, JA
[J]. 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 363 - 366
[8] Modeling of SOI FET for RF Switch Applications
Lee, Tzung-Yin
Lee, Sunyoung
[J]. 2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, : 479 - 482
[9] Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI
Scholvin, Jorg
Fiorenza, James G.
del Alamo, Jesus A.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (07) : 1705 - 1711
[10] Modeling and Design of the LDMOSFET for RF power amplifier applications
Liu, Ting
Chee, Kuan W. A.
[J]. PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2015,

← 1 2 3 4 5 →