High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers

被引:57
|
作者
Kumar, AKS
Paruch, P
Triscone, JM
Daniau, W
Ballandras, S
Pellegrino, L
Marré, D
Tybell, T
机构
[1] Univ Geneva, DPMC, CH-1211 Geneva 4, Switzerland
[2] Lab Phys & Metrol Oscillateurs, CNRS, UPR 3203, F-25044 Besancon, France
[3] INFM, Res Unit Genoa, I-16146 Genoa, Italy
[4] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7491 Trondheim, Norway
关键词
D O I
10.1063/1.1787897
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using high-quality epitaxial c-axis Pb(Zr0.2Ti0.8)O-3 films grown by off-axis magnetron sputtering onto metallic (001) Nb-doped SrTiO3 substrates, a nonconventional thin-film surface acoustic wave device based on periodic piezoelectric transducers was realized. The piezoelectric transducers consist of a series of ferroelectric domains with alternating polarization states. The artificial modification of the ferroelectric domain structure is performed by using an atomic force microscope tip as a source of electric field, allowing local switching of the polarization. Devices with 1.2 and 0.8 mum wavelength, defined by the modulation period of the polarization, and corresponding to central frequencies in the range 1.50-3.50 GHz have been realized and tested. (C) 2004 American Institute of Physics.
引用
收藏
页码:1757 / 1759
页数:3
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