Cobalt Tungsten Oxide Thin Films Prepared by RF-Sputter for Photosensor

被引：8
|
作者：
Lan, Kai-Wei [1 ]
Hong, Ying-Jhan [1 ]
Chang, Pin [1 ]
Yew, Tri-Rung [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
来源：
ADVANCED MATERIALS INTERFACES | 2017年 / 4卷 / 11期
关键词：
CHEMICAL-VAPOR-DEPOSITION; PHOTODETECTORS; ULTRAVIOLET; NANOWIRES; SUBSTRATE; PERFORMANCE; GAIN;
D O I：
10.1002/admi.201601165
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This study reports the synthesis and characterization of nonstoichiometric nanocrystalline Co2.59W0.41O4 thin film by the radio frequency (RF)-sputter technique suitable for photosensor applications. The photoconductive characteristics of Co2.59W0.41O4 thin film are investigated by fabricating a sandwich-structure device of p(+)Si/Co2.59W0.41O4 thin film/indium tin oxide with Schottky barriers. The device characteristics including responsivity, light intensity response, and time response are studied. It is found that Co2.59W0.41O4 thin film exhibits good absorption (absorption coefficient approximate to 10(4) cm(-1) in visible light spectrum), relatively high responsivity (R-res = 5.427 A W-1), and fast photoresponse time including rise time (t(r)) = 81.04 ms and fall time (t(f)) = 80.67 ms. Hence, the Co2.59W0.41O4 thin film is favorable for potential photosensor applications.
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页数：7
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