Multiple Tanks Technique Application to silicon-based radio-frequency and millimeter-wave integrated circuits

被引:1
|
作者
Ma, Kaixue [1 ]
Liu, Mingyun [1 ]
Ma, Zonglin [2 ]
Yeo, Kiat Seng [3 ]
机构
[1] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Peoples R China
[3] Singapore Univ Technol & Design, Engn Prod Dev Pillar, Singapore 487372, Singapore
关键词
POWER-AMPLIFIER; HIGH-PAE; ILFD;
D O I
10.1109/MNANO.2022.3160773
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Radio-frequency (RF) integrated circuits (ICs) and millimeter-wave (mm-wave) ICs play crucial roles in modern wireless communication systems in laptops, smart phones, tablets, and so on. Silicon-based processes that have low cost and high integrity prompt the wide adoption of RF/mm-wave ICs in consumer electronics. However, the high substrate and metal losses of commercial silicon are considered inherent drawbacks, especially for RFIC designs with low-resistivity silicon of ∼10 Ω/square. We propose a multiple tanks topology to overcome this issue. The topology utilizes coupled multiple coils as a transformer to improve the equivalent quality factor (Q factor) of the tanks. Different applications if ICs, such as voltage-controlled oscillators (VCOs), dividers, power amplifiers (PAs), switches, and other circuits with frequencies up to 300 GHz, verify that by using this technique, dedicated RF/mm-wave IC performance can be significantly improved. Moreover, a 60-GHz transceiver system-on-chip (SOC) based on this technique is verified. This article presents the proposed method and implementation, from the fundamental concept and analysis to IC and system verification. © 2007-2011 IEEE.
引用
收藏
页码:42 / 60
页数:19
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