Dielectric and ferroelectric properties of Ta-doped bismuth titanate

被引：58
|
作者：
Hong, SH [1 ]
Horn, JA
Trolier-McKinstry, S
Messing, GL
机构：
[1] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
[2] Penn State Univ, Particulate Mat Ctr, University Pk, PA 16802 USA
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 18期
关键词：
Bismuth titanate - Curie temperature;
D O I：
10.1023/A:1006722312423
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.
引用
收藏
页码：1661 / 1664
页数：4
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