Potential and modeling of 1-μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz

被引：13

作者：

Eggermont, JP ^{[1
]}

Flandre, D

Raskin, JP

Colinge, JP

机构：

[1] Univ Catholique Louvain, Microelect Lab, B-1348 Louvain, Belgium

[2] Univ Catholique Louvain, Microwave Lab, B-1348 Louvain, Belgium

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1998年 / 33卷 / 04期

关键词：

analog circuit; CMOS; filtering; fully depleted SOI; mobile communication; operational amplifier; RF amplifier;

D O I：

10.1109/4.663571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The potential of 1-mu m SOI complementary metal-oxide-semiconductor (CMOS) technology for the realization of operational transconductance amplifiers (OTA's) with transition frequencies in the gigahertz range Is demonstrated, High-frequency device models, design guidelines and frequency limitations are detailed, as well as layout and technology improvements which can be used to boost the transconductance at high frequency and to reduce the source/drain-to-substrate capacitances, One-stage and folded-cascode OTA's have been realized to validate the design methodology.

引用

页码：640 / 643

页数：4

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Microelectronics Laboratory, Univ. Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
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