Ultrabroadband AlGaAs/CaF2 semiconductor saturable absorber mirrors

被引：27
|
作者：
Schön, S [1 ]
Haiml, M [1 ]
Keller, U [1 ]
机构：
[1] ETH Honggerberg HPT, Swiss Fed Inst Zurich, Inst Quantum Elect, CH-8093 Zurich, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 06期
关键词：
D O I：
10.1063/1.1306917
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultrabroadband semiconductor saturable absorber mirrors (SESAMs) are required to support self-starting sub-10-fs-pulse generation with Ti:sapphire lasers. Conventional AlxGa1-xAs/AlAs SESAMs are limited by the reflection bandwidth of about 60 nm of the bottom Bragg mirror. In this letter, we demonstrate a GaAs saturable absorber which is epitaxially grown on CaF2 using molecular-beam epitaxy. Even though the difference of the thermal expansion coefficient is very large, we were able to demonstrate good modulation depth with small nonsaturable losses. This is interesting for ultrabroadband SESAMs because the large refractive-index difference between CaF2 and AlxGa1-xAs results in very broadband AlxGa1-xAs/CaF2 Bragg mirrors extending over about a 400-nm-wide reflection bandwidth for a center wavelength of 850 nm. (C) 2000 American Institute of Physics. [S0003-6951(00)04332-1].
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页码：782 / 784
页数：3
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