Short circuit current variation of CIGS solar cells with grain boundaries recombination velocity

The material CuInx Ga1-xSe2 (CIGS with O<x<0.3) has attracted much attention, recently, all over the world as a prospective material for photovoltaic application. The addition of gallium in CIS (CuInSe2) considerably improves not only the performance but the stability and efficiency of the device also. A theoretical analysis of variation of short circuit current density (J(SC)) of polycrystalline solar cell has been reported. As the grain size (d(G)) and grain boundary recombination velocity (S-GB) play an important role in deciding device characteristics, the calculations of the dependence of short-circuits photocurrent density (J(SC)) have been done on these parameters. The results show a good agreement with the experimental results. A small discrepancy may be attributed to the, fact that the typical shape of the grains was assumed to be square-face columnar shaped.