Observation of Strong Photo Induced Inverse Spin Hall Effect in Heavily Doped n-GaAs

被引：0
|
作者：
Mudi, Priyabrata [1 ,2 ]
Khamari, Shailesh K. [2 ]
Sharma, T. K. [1 ,2 ]
机构：
[1] Homi Bhabha Natl Inst, Mumbai, Maharashtra, India
[2] Raja Ramanna Ctr Adv Technol, Mat Sci Div, Semicond Mat Lab, Indore 452013, Madhya Pradesh, India
来源：
DAE SOLID STATE PHYSICS SYMPOSIUM 2018 | 2019年 / 2115卷
关键词：
D O I：
10.1063/1.5113299
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strong Inverse spin Hall Effect is observed in heavily doped n type GaAs at room temperature. Spin polarized electrons were injected in the sample using optical method. Spin polarized current was established by transporting the photo-generated electrons between two coplanar electrodes by applying external bias. Spintronic origin of the signal was confirmed by varying the degree of circular polarization of incident laser beam. Further, the magnitude of spin Hall angle is estimated by combining the experimental results with theoretical simulations related to spin relaxation time.
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页数：4
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