A mode III crack in a piezoelectric semiconductor of crystals with 6 mm symmetry

被引：72
|
作者：
Hu, Yuantai [1 ]
Zeng, Yun
Yang, Jiashi
机构：
[1] Cent S Univ, Sch Civil Engn & Architecture, Inst Mech & Sensing Technol, Changsha 410083, Hunan, Peoples R China
[2] Huazhong Univ Sci & Technol, Sch Civil Engn & Mech, Dept Mech, Wuhan 430074, Peoples R China
[3] Univ Nebraska, Dept Engn Mech, Lincoln, NE 68588 USA
来源：
INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES | 2007年 / 44卷 / 11-12期
关键词：
piezoelectricity; semiconductor; crack;
D O I：
10.1016/j.ijsolstr.2006.10.033
中图分类号：
O3 [力学];
学科分类号：
08 ; 0801 ;
摘要：
A finite mode III crack in a piezoelectric semiconductor of 6 min crystals is analyzed. Fourier transform is employed to reduce the mixed boundary value problem to a pair of dual-integral equations. Numerical solution of these equations yields coupled electromechanical fields, the intensity factor and the energy release rate near the crack tip. Numerical results are presented graphically to show the fracture behavior which is affected by the semiconduction. (C) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：3928 / 3938
页数：11
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