Synchrotron X-ray topography of dislocations in high-pressure high-temperature-grown single-crystal diamond with low dislocation density

Individual dislocations in high-pressure high-temperature-grown single-crystal diamond with a dislocation density of less than 47 cm(-2) in the (001) growth sector were observed using synchrotron X-ray topography in the Laue geometry. By analyzing image contrasts for various g vectors using photoluminescence images, we found that dislocations in the (001) growth sector run in the [001] direction; some are pure edge dislocations having Burgers vectors (b) of a/2[(1) over bar 10] or a/2[110] while others are mixed dislocations. Dislocations in the (111) growth sector have b= a/2[(1) over bar 10] and run in the direction from [111] to [331]; they are classified as edge dislocations. (C) 2014 The Japan Society of Applied Physics