PDMS-based subwavelength structures for broadband and wide-angle anti-reflection

被引:4
|
作者
Yin, Yunzhen [1 ,2 ]
Bu, Yanyan [3 ]
Wang, Xiangfu [1 ,2 ,4 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Sci, Nanjing 210023, Peoples R China
[4] China Bldg Mat Acad, State Key Lab Green Bldg Mat, 1 Guanzhuang Dongli Chaoyang Dist, Beijing 100024, Peoples R China
基金
中国国家自然科学基金;
关键词
Subwavelength structure; Anti-reflection; Polydimethylsiloxane; Admittance recursive method; SILICON;
D O I
10.1016/j.physb.2019.411943
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Subwavelength structures were reported to have excellent anti-reflection (AR) performance. However, it is difficult to achieve effective AR in broadband and wide-angle. In this work, we report the new subwavelength structures fabricated by polydimethylsiloxane (PDMS) for broadband and wide-angle AR. Two new subwavelength structures, alternating structure and stacking structure, are designed. The admittance recursive method is used to calculate the reflectance of subwavelength structures in the range of incident wavelengths from 200 nm to 2500 nm and incident angles from 0 degrees to 80 degrees. It is found that the combination of the 300 nm stacking structure on the front surface and the 500 nm alternating structure on the back surface has the better AR performance. In the wide spectrum and wide incident angle, the maximum reflectance is reduced to 6.8% and 12.0%. Compared to bare glass, the average transmittance was increased by 6.6% and 12.4%, respectively.
引用
收藏
页数:8
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