Comparative Study on Hole Transport in N,N′-bis(naphthalen-1-yl)-N,N′-bis(pheny) Benzidine and 4, 4′, 4"-tri(N-carbazolyl)triphenylamine

被引：3

作者：

Qiao Xian-Feng ^{[1
,2
]}

Chen Jiang-Shan ^{[1
]}

Ma Dong-Ge ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 08期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; CHARGE-TRANSPORT; DEVICES; COPOLYMER; INJECTION; ELECTRON;

D O I：

10.1088/0256-307X/27/8/088504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Hole transport characteristics in N,N'-bis(naphthalen-1-yl)-N,N'-bis(pheny) benzidine (NPB) and 4, 4', 4 ''-tri(N-carbazolyl)triphenylamine (TCTA) are comparatively investigated. The current density-voltage (J - V) characteristics of hole-only devices based on NPB and TCTA at different temperatures and thicknesses show that the hole current is dominated by the bulk conduction with an exponential trap distribution. Detailed analyses of the J - V characteristics give the trap densities N-t of (6.3 +/- 0.3) x10(18) and (1.9 +/- 0.02) x10(18) cm(3), characteristic trap depths of 135 +/- 6 and 117 +/- 5 meV, hole mobilities of (8.1 +/- 0.5) x 10(-5) and (1.9 +/- 0.1) x 10(-4) cm(2) V-1 s(-1) for NPB and TCTA, respectively. It is found that TCTA exhibits higher hole mobility. Obviously, this is directly related to the lower trap density and shallow trap depth in TCTA films, leading to good charge carrier transport.

引用

页数：4

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