Far infrared spectroscopy of confined LO phonons in [113] GaAs/AlAs superlattices

被引：0
|
作者：
Queck, D [1 ]
Luerssen, D [1 ]
Kalt, H [1 ]
机构：
[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1998年 / 207卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-3951(199805)207:1<299::AID-PSSB299>3.0.CO;2-V
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the observation of both, GaAs and AlAs confined longitudinal optical (LO) phonons in Fourier transform infrared (FTIR) reflection measurements of [113] GaAs/AlAs superlattices. This observation is possible due to the use of samples grown on doped substrates in combination with the technique of oblique beam incidence. The phonon dispersions determined from the energies of the confined LO1 and LO3 modes in the GaAs and AlAs layers are in good agreement with theoretical predictions if the influence of interface roughness is accounted for.
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页码：299 / 305
页数：7
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