The role of sulfurization temperature on the morphological, structural and optical properties of electroplated Cu2MnSnS4 absorbers for photovoltaics

被引：13

作者：

Yu, Jiejin ^{[1
]}

Deng, Hongmei ^{[2
]}

Zhang, Qiao ^{[1
]}

Tao, Jiahua ^{[1
]}

Sun, Lin ^{[1
]}

Yang, Pingxiong ^{[1
]}

Chu, Junhao ^{[1
]}

机构：

[1] East China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[2] Shanghai Univ, Lab Microstruct, 99 Shangda Rd, Shanghai 200444, Peoples R China

来源：

MATERIALS LETTERS | 2018年 / 233卷

基金：

中国国家自然科学基金;

关键词：

Cu2MnSnS4; Thin films; Sulfurization temperature; Solar cells; Semiconductors; CU2MNSN(S; SE)(4); THIN-FILMS; SOLAR-CELLS; RADICAL OXIDATION; TIME;

D O I：

10.1016/j.matlet.2018.08.147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work, the effect mechanisms of the sulfurization temperature on the Cu2MnSnS4 (CMTS) absorbers and the photovoltaic characteristics of devices were studied systematically. The results indicate that an increase in sulfurization temperature form 500 degrees C to 560 degrees C significantly improves the crystallinity and morphology, lowers the band gap of the CMTS absorbers, and eventually enhances the photovoltaic performance. However, a further increase in the temperature to 590 degrees C degrades the crystallinity and morphology. By tuning sulfurization temperature, the short current density (J(sc)) and power conversion efficiency (PCE) increase over fourfold. When the temperature optimized to 560 degrees C, the CMTS solar cell shows the highest PCE of 0.91% with J(sc) = 7.71 mA.cm(-2), V-oc = 320 mV and FF = 37%. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：111 / 114

页数：4

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