Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers

被引：0
|
作者：
Zegrya, GG [1 ]
Kostko, IA [1 ]
Gunko, NA [1 ]
Dogonkin, EB [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg, Russia
来源：
10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷
关键词：
quantum well lasers; gain; threshold current; relaxation processes; Green functions;
D O I：
10.1117/12.514389
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The effect of carrier-carrier relaxation on threshold and power-current characteristics of InAs and GaAs quantum well (QW) lasers is studied. Dependence of carrier relaxation time on temperature and carrier density is considered. It is shown that in this case the gain coefficient becomes a more pronounced function of temperature and carrier density, and threshold current density increases drastically.
引用
收藏
页码：395 / 397
页数：3
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