Structural phase transformation in ZnS nanocrystalline thin films by swift heavy ion irradiation

被引：33

作者：

Patel, Shiv P. ^{[1
]}

Chawla, A. K. ^{[2
]}

Chandra, Ramesh ^{[2
]}

Prakash, Jai ^{[3
]}

Kulriya, P. K. ^{[4
]}

Pivin, J. C. ^{[5
]}

Kanjilal, D. ^{[4
]}

Kumar, Lokendra ^{[1
]}

机构：

[1] Univ Allahabad, Fac Sci, Dept Phys, Allahabad 211002, Uttar Pradesh, India

[2] Indian Inst Technol, Nanosci Lab, IIC, Roorkee 247667, Uttar Pradesh, India

[3] MMH PG Coll, Dept Chem, Ghaziabad 201001, India

[4] Inter Univ Accelerator Ctr, New Delhi 110067, India

[5] CNRS, IN2P3, CSNSM, F-91405 Orsay, France

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 25-26期

关键词：

Thin films; Semiconductors; Phase transitions; Electron-phonon interactions; ZINC-SULFIDE; SOLAR-CELLS; DEPOSITION; TRANSITION; SEMICONDUCTORS; SIZE;

D O I：

10.1016/j.ssc.2010.03.017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zinc sulfide (ZnS) thin films in zinc-blende (ZB) and wurtzite (W) phases have been fabricated by pulsed laser deposition. 150 MeV Ni ion beam irradiation has been carried out at different fluences ranging from 10(11) to 10(13) ions/cm(2) at room temperature for ion induced modifications. Structural phase transformation in ZnS from W to ZB phase is observed after high energy ion irradiation which leads to the decrease in bandgap. Generation of high pressure and temperature by thermal spike during MeV Ion irradiation along the ion trajectory in the films is responsible for the structural phase transformation. (C) 2010 Elsevier Ltd. All rights reserved

引用

页码：1158 / 1161

页数：4

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