Spin-Polarization in Quasi-Magnetic Tunnel Junctions

被引:0
|
作者
Xie, Zheng-Wei [1 ]
Li, Ling [1 ]
机构
[1] Sichuan Normal Univ, Coll Phys & Elect Engn, Chengdu 610066, Peoples R China
关键词
ROOM-TEMPERATURE; MAGNETORESISTANCE; CONDUCTANCE; FILMS;
D O I
10.1088/0256-307X/34/5/057502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasimagnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight.
引用
收藏
页数:4
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