SiSn Film on Insulator by Low-Temperature Solid-Phase Crystallization

被引：0
|
作者：
Kosugi, Tomohiro [1 ]
Yagi, Kazuki [1 ]
Sadoh, Taizoh [1 ]
机构：
[1] Kyushu Univ, Dept Elect, Nishi Ku, 744 Motooka, Fukuoka 8190395, Japan
来源：
2020 TWENTY-SEVENTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 20): TFT TECHNOLOGIES AND FPD MATERIALS | 2020年
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中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Effects of the Sn concentration and film thickness on solid-phase crystallization of SiSn films on insulator have been investigated. It is found that growth velocities significantly increase with increasing Sn concentration from 5% to 10%. For low Sn concentration (5%), the growth velocities decease with decreasing film thickness. On the other hand, for high Sn concentration (10%), the growth velocities do not depend on the thickness. These phenomena suggest that the growth process for low Sn concentrations are easily affected by the interface.
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页数：2
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