Low-Power Write-Circuit with Status-Detection for STT-MRAM

被引：4

作者：

Shin, Kwang-Seob ^{[1
]}

Im, Saemin ^{[1
]}

Park, Sang-Gyu ^{[1
]}

机构：

[1] Hanyang Univ, Dept Elect & Comp Engn, 222 Wangsimni Ro, Seoul 133791, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2016年 / 16卷 / 01期

关键词：

STT-MRAM; write-operation; reference cell; power saving;

D O I：

10.5573/JSTS.2016.16.1.023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a STT-MRAM write-scheme, in which the length of the write-pulse is determined dynamically by sensing the status of MTJ cells. The proposed scheme can reduce the power consumption by eliminating unnecessary writing current after the switching has occurred. We also propose a reference cell design, which is optimized for the use in write-circuits. The performance of the proposed circuit was verified by SPICE level simulations of the circuit implemented in a 0.13 mu m CMOS process.

引用

页码：23 / 30

页数：8

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