Novel positive Bias Temperature Instability (PBTI) of N-channel MOSFETs with plasma nitrided oxide

被引：3
|
作者：
Huard, V. [1 ]
Guerin, C. [2 ]
Parthasarthy, C. [2 ]
机构：
[1] NXP Semicond, 850 Rue Jean Monnet, F-38926 Crolles, France
[2] STMicroelect, F-38926 Crolles, France
来源：
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | 2007年
关键词：
D O I：
10.1109/RELPHY.2007.369570
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This work reports for the first time a new Positive Bias Temperature Instability (PBTI) degradation mode in n-channel MOSFETs related to the introduction of plasma nitridation process step. The degradation is explained only by interface traps creation, differently to NBTI on p-channel MOSFETs where hole trapping might be dominant.
引用
收藏
页码：686 / +
页数：2
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